FDMC6686P دیتاشیت

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مشاهده دیتاشیت FDMC6686P	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC6686P
Power Dissipation (Pd): 2.3W
Drain Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 18A
Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@4.5V,18A
Package: PQFN-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 10V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Package / Case: 8-PowerWDFN
Base Part Number: FDMC66
detail: P-Channel 20V 18A (Ta), 56A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33